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In order to compare point defect formation in germanium through different modes of production, Hall measurements have been made on germanium after different treatments. The same starting material was used in all experiments, namely, 5 ohm‐cm p‐type germanium. Markedly different behavior was observed. For the electron bombarded material, the number of carriers is reduced at all temperatures below room temperature, while the quenched material shows an increase at all temperatures. The deformed material exhibits intermediate behavior, with the carrier concentration increased at high temperatures and decreased at low temperatures. This is accounted for by an energy level scheme similar to that of James and Lark‐Horovitz.