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Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°C. Electron probe microanalysis indicated 4.83×1020 Ga atoms and 2.36×1020 Sb atoms/cc in the saturated material with an estimated error of about 10%. Thus the solubility of Sb is greatly enhanced by the presence of Ga, though the reverse is not true. Hall measurements were in semiquantitative agreement with the chemical concentration measurements and indicated that carrier mobility is not much affected by the presence of the compensating impurity.