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For detailed failure analysis of monolithic microwave integrated circuits (MMIC), device internal test systems, featuring simultaneously high spatial resolution, GHz voltage measurement ability and topographic imaging, must be used. Scanning force microscope testing proved suitable, but former microwave measurements within submicron devices focused on point measurements, only. Now we present for the first time mappings of submicron device internal MMIC signals at 8 GHz on 500 nm structures. A spatial resolution of 80 nm is achieved.