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Evaporation of Impurities from Semiconductors

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3 Author(s)
Lehovec, K. ; Sprague Electric Company, North Adams, Massachusetts ; Schoeni, K. ; Zuleeg, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1722765 

Equations are derived for the impurity distribution which arises by evaporation of impurities from the surface of a homogeneously doped semiconductor. The rate of evaporation is assumed to be proportional to the surface concentration. When a rectifying metal contact is made to a semiconductor with such an impurity distribution, the dependence of capacitance on the applied voltage can be used to determine the proportionality constant between rate of evaporation and surface concentration.

Published in:

Journal of Applied Physics  (Volume:28 ,  Issue: 4 )

Date of Publication:

Apr 1957

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