Cart (Loading....) | Create Account
Close category search window

Evaporation of Impurities from Semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lehovec, K. ; Sprague Electric Company, North Adams, Massachusetts ; Schoeni, K. ; Zuleeg, R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Equations are derived for the impurity distribution which arises by evaporation of impurities from the surface of a homogeneously doped semiconductor. The rate of evaporation is assumed to be proportional to the surface concentration. When a rectifying metal contact is made to a semiconductor with such an impurity distribution, the dependence of capacitance on the applied voltage can be used to determine the proportionality constant between rate of evaporation and surface concentration.

Published in:

Journal of Applied Physics  (Volume:28 ,  Issue: 4 )

Date of Publication:

Apr 1957

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.