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Diffusion of Aluminum in Single Crystal Silicon

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2 Author(s)
Miller, R.C. ; Bell Telephone Laboratories, Inc., Murray Hill, New Jersey ; Savage, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1722283 

The diffusion of aluminum into silicon has been reinvestigated to clear up certain discrepancies in the existing aluminum data. The diffusion constants found in this work are in good agreement with those determined by Fuller and Ditzenberger and an order of magnitude less than those reported in another investigation. Aluminum solid solubilities in the neighborhood of 1019 atoms/cm3 have been found over the 1200 to 1400°C temperature range. These concentrations are several orders of magnitude larger than those reported in other aluminum diffusion investigations. The p‐n junction penetrations and transition capacitances of the diffused samples were used to determine diffusivities and solid solubilities.

Published in:

Journal of Applied Physics  (Volume:27 ,  Issue: 12 )

Date of Publication:

Dec 1956

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