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Static RAM generators with automated characterization techniques for a 0.5 micron triple-metal embedded array

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2 Author(s)
Sawhney, P. ; SGS-Thomson Microelectron., New Delhi, India ; Rasheed, H.

This paper describes the design and development of module generators for metallized single-port and dual-port static RAMs (SPRAM and DPRAM) for a 0.5 micron embedded-array family. These generators offer an ASIC designer the ability to choose RAMs of user-defined size with some flexibility on the aspect ratio. An automatic generator characterisation (AGC) tool developed to efficiently characterize RAM generators is discussed

Published in:

VLSI Design, 1995., Proceedings of the 8th International Conference on

Date of Conference:

4-7 Jan 1995