Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1721673
A transistor structure utilizing a planar p‐n junction as a collector, and a point contact as an emitter has been analyzed theoretically and experimentally. The theory indicates that for maximum frequency cutoff the plane containing the emitter point should be nearly parallel to the collector junction. Also it is found that the base resistance is a critical function of the spacing between the emitter point and the collector junction. Results for experimental models are discussed.