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Browse Journals & Magazines > Electronics Letters ...> Volume:32 Issue:16 Help

Thermal effects in HBT emitter resistance extraction

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4 Author(s)
Hanington, G. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Chang, C.E. ; Zampardi, P.J. ; Asbeck, P.M.

It is shown that device self-heating effects introduce a significant error in the determination of emitter resistance in AlGaAs-GaAs HBTs by the common technique of extrapolating 1/gm against 1/lc (where gm is the observed device transconductance). An approximate expression for the error is given, and an improved technique for Re extraction is presented

Published in:
Electronics Letters  (Volume:32 ,  Issue: 16 )

Date of Publication: 1 Aug 1996

Page(s):
1515 - 1516
ISSN :
0013-5194
INSPEC Accession Number:
5354269
Digital Object Identifier :
10.1049/el:19961017
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
1 Aug 1996
Sponsored by :
Institution of Engineering and Technology

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