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This paper introduces a novel silicon controlled rectifier (SCR)-based device for ESD power clamp and I/O clamp. The device obtained the high holding voltage and low triggering voltage by adding a p-drift junction and n-well in the cathode region. These characteristics enable latch-up immune normal operation as well as superior full chip ESD protection. The proposed device is designed by compatible 0.35 um BCD (bipolar-CMOS-DMOS) technology. We investigated electrical characteristic by measurement and TCAD simulation. In the measurement result, the proposed device has triggering voltage of 12.8 V and holding voltage of 10 V. The proposed device has high holding voltage as well as high robustness and second breakdown current. (It2=67.4mA/um).