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Browse Journals & Magazines > Electronics Letters ...> Volume:45 Issue:13 Help

GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer

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3 Author(s)
Lin, Y.R. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Lin, H.H. ; Chu, J.H.

A GaAs0.7Sb0.3/GaAs type-II quantum-well laser with a InAs quantum-dot (QD) layer adjacent to the well is reported. The laser shows much lower threshold current density, lower internal loss and higher characteristic temperature than the device without adjacent QDs. The better performances are attributed to additional dimensional confinement, resulting from a spatial potential fluctuation induced by the adjacent QDs, for carriers in the active region of the laser.

Published in:
Electronics Letters  (Volume:45 ,  Issue: 13 )

Date of Publication: June 18 2009

Page(s):
682 - 683
ISSN :
0013-5194
INSPEC Accession Number:
10704600
Digital Object Identifier :
10.1049/el.2009.1243
Product Type:
Journals & Magazines
Date of Current Version :
26 June 2009
Issue Date :
June 18 2009
Sponsored by :
Institution of Engineering and Technology

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