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Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications

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6 Author(s)
Chian-Gauh Shih ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Wei-Heng Chang ; Jianshi Wang ; Barlage, D.W.
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This paper describes a 1 Gb/s fully monolithic integrated GaAs OEIC receiver based on 0.6 μm gate length D-mode MESFET technology. The adoption of 0.85 μm short wavelength standard permits the integration of low capacitance MSM photodetectors and conventional electronic circuitry onto a single chip. Hence, the viability of low-cost manufacturing of high-speed optoelectronic devices will be improved. The design, fabrication, and testing of the receiver chip is discussed in detail. A BER of less than 10-9 at 1 Gb/s has been achieved for optical power of -20.5 dBm with a dynamic range of greater than 32 dB. This performance is sufficient for practical use in optical data link systems operating at gigabit/s data rates

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Lightwave Technology, Journal of  (Volume:14 ,  Issue: 6 )