Referenced Items are not available for this document.
This paper describes a 1 Gb/s fully monolithic integrated GaAs OEIC receiver based on 0.6 μm gate length D-mode MESFET technology. The adoption of 0.85 μm short wavelength standard permits the integration of low capacitance MSM photodetectors and conventional electronic circuitry onto a single chip. Hence, the viability of low-cost manufacturing of high-speed optoelectronic devices will be improved. The design, fabrication, and testing of the receiver chip is discussed in detail. A BER of less than 10-9 at 1 Gb/s has been achieved for optical power of -20.5 dBm with a dynamic range of greater than 32 dB. This performance is sufficient for practical use in optical data link systems operating at gigabit/s data rates
Published in:
Lightwave Technology, Journal of
(Volume:14
,
Issue:
6
)
Date of Publication: Jun 1996
- Page(s):
- 1480 - 1487
- ISSN :
- 0733-8724
- INSPEC Accession Number:
- 5319070
- Digital Object Identifier :
- 10.1109/50.511677
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1996
- Sponsored by :
- IEEE Aerospace and Electronic Systems Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
