Cart (Loading....) | Create Account
Close category search window
 

Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chen, C.L. ; Lincoln Lab., MIT, Lexington, MA, USA ; Mahoney, L.J. ; Nichols, K.B. ; Brown, E.R.
more authors

A new p-channel GaAs metal-insulator-semiconductor field-effect transistor (MISFET) using low-temperature-grown (LTG) GaAs as the gate insulator is demonstrated. Neither the GaAs conducting channel nor the gate insulator was doped, and a Be self-aligned implant was used to lower the source and drain series resistance. For a MISFET with a 1.5-/spl mu/m gate length, the transconductance is 22 mS/mm and the maximum drain current is 120 mA/mm obtained at -8 V of gate bias. The measured unity-current-gain cut-off frequency f/sub T/ is 2.0 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 8 )

Date of Publication:

Aug. 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.