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Self-aligned p-channel MISFET with a low-temperature-grown GaAs gate insulator

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5 Author(s)
Chen, C.L. ; Lincoln Lab., MIT, Lexington, MA, USA ; Mahoney, L.J. ; Nichols, K.B. ; Brown, E.R.
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A new p-channel GaAs metal-insulator-semiconductor field-effect transistor (MISFET) using low-temperature-grown (LTG) GaAs as the gate insulator is demonstrated. Neither the GaAs conducting channel nor the gate insulator was doped, and a Be self-aligned implant was used to lower the source and drain series resistance. For a MISFET with a 1.5-/spl mu/m gate length, the transconductance is 22 mS/mm and the maximum drain current is 120 mA/mm obtained at -8 V of gate bias. The measured unity-current-gain cut-off frequency f/sub T/ is 2.0 GHz.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 8 )

Date of Publication:

Aug. 1996

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