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Fast and simple method for calculating the minority-carrier current in arbitrarily doped semiconductors

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1 Author(s)
Rinaldi, N.F. ; Dept. of Electron. Eng., Naples Univ., Italy

A fast numerical method for evaluating the minority-carrier current injected into arbitrarily doped semiconductor regions is presented. The method is based on an efficient regional approach and is very easy to implement

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:15 ,  Issue: 8 )