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Study on the dominant mechanisms for the temperature sensitivity of threshold current in 1.3-μm InP-based strained-layer quantum-well lasers

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5 Author(s)
S. Seki ; NTT Opto-Electron. Labs., Kanagawa, Japan ; H. Oohashi ; H. Sugiura ; T. Hirono
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We study the basic physical mechanisms determining the temperature dependence of the threshold current (Ith) of InP-based strained-layer (SL) quantum-well (QW) lasers emitting at a wavelength of 1.3 μm. We show that Ith exhibits a different temperature dependence above and below a critical temperature Tc. It is indicated that Tc is the maximum temperature below which the threshold gain exhibits a linear relationship with temperature. We demonstrate that below Tc the Auger recombination current dominates the temperature dependence of Ith. On the other hand, above Tc a significant increase in both the internal loss and radiative recombination current in the separate-confinement-heterostructure region, which is mainly due to electrostatic band-profile deformation, is found to play a major role in determining the temperature sensitivity of Ith. On the basis of the comparison between the theoretical analysis and the experimental results, we conclude that the temperature dependence of the threshold current in 1.3-μm InP-based SL-QW lasers is dominated by different mechanisms above and below Tc

Published in:

IEEE Journal of Quantum Electronics  (Volume:32 ,  Issue: 8 )