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Receiver sensitivities of Ga0.47In0.53As photoconductive detectors

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1 Author(s)
Chen, C.Y. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Photoconductive detectors have emerged to beome an important technology for lightwave communication since the recent demonstration of a Ga0.47In0.53As detector having a receiver sensitivity better than that of a Ga0.47In0.53As p‐i‐n photodiode. This study shows that the receiver sensitivity of a photoconductive detector compares fairly well with that of a p‐i‐n photodiode (CT=1.0 pF) in the multigigabit rate regime. The calculated result is within 1.4 dB of our measurement data at 1 Gb/s, λ=1.3 μm for a bit error rate of 10-9. This study further illustrates that noise in an undoped GaInAs photoconductive detector/field effect transistor front end system is dominated by the detector for bit rates less than 3 Gb/s.

Published in:

Journal of Applied Physics  (Volume:57 ,  Issue: 4 )

Date of Publication:

Feb 1985

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