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Effect of illumination and magnetic fields on the electron transport properties of Pb0.75Sn0.25Te doped with indium

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5 Author(s)
Martinez, Antonio ; Naval Surface Weapons Center, White Oak, Silver Spring, Maryland 20910 ; Abbundi, R.J. ; Houston, Bland ; Davis, John L.
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Electrical transport measurements between 300 and 1.5 K were made on two Pb0.75Sn0.25Te films doped approximately 0.5 at. % indium. The Hall mobility, Hall coefficient, and resistivity display an unusual temperature dependence relative to those of undoped PbSnTe which suggest a phase transition at approximately 18 K. These samples also exhibit high photosensitivity below 21 K where slowly relaxing and persistent photoconductivity was observed. Time constants for the photoconductive relaxation were found for temperatures between 8 and 19 K. The application of a magnetic field during sample cooldown had a large effect on the zero‐field resistivity of the sample at 4.2 K.

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Journal of Applied Physics  (Volume:57 ,  Issue: 4 )