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Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

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5 Author(s)
Soga, T. ; Department of Electronics, Faculty of Engineering, Nagoya University, Furo‐cho, Chikusa‐ku, Nagoya 464, Japan ; Hattori, Shuzo ; Sakai, Shiro ; Takeyasu, Masanari
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GaAs grown on Si substrate with AlP, AlGaP, GaP/GaAs0.5P0.5 superlattice, and GaAs0.5P0.5/GaAs superlattice was investigated by varying the structure of the intermediate layers between GaAs and Si by metalorganic chemical vapor deposition. It was found that (1) the insertion of AlP and AlGaP layers makes the crystallinity and the surface morphology better, (2) PL (photoluminescence) intensity with two superlattice layers is about one order of magnitude stronger than that without these layers, (3) the crack formation in the GaAs surface layer can be avoided by the strained superlattice layers, (4) the PL intensity has a maximum at about 20 nm for each layer thickness in the superlattices, and (5) the PL intensity increases and the carrier concentration decreases while increasing the thickness of the surface GaAs and saturates over 3 μm. The PL intensity of GaAs on Si substrates is about 80% of that grown on GaAs substrates.

Published in:

Journal of Applied Physics  (Volume:57 ,  Issue: 10 )

Date of Publication:

May 1985

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