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Channelled‐substrate buried heterostructure InGaAsP/InP lasers have been fabricated with vapor phase epitaxial grown base structures and liquid phase epitaxial regrowth. These devices have low pulsed threshold currents (14 mA minimum, median 19 mA), exhibit a pulsed threshold current temperature dependence with a characteristic temperature of 55 K, and operate cw up to 80 °C heat sink temperature. Life test results on these lasers have exhibited degradation rates in range 0–3 mA per thousand hours on burned‐in laser under 60 °C and 3 mW automatic power control accelerated aging conditions.