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Heating silicon dioxide at 950–1050 °C in the presence of an NH3+CF4 plasma

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3 Author(s)
Morita, M. ; Department of Electrical Engineering, Hiroshima University, Higashihiroshima 724, Japan ; Ishihara, T. ; Hirose, M.

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Very thin SiO2 films thermally grown on Si were annealed at a temperature of 950 or 1050 °C in the glow discharge of either an NH3 gas containing 4% CF4 or a pure NH3. From the chemical analysis of annealed films using Auger electron spectroscopy and x‐ray photoelectron spectroscopy, it is found that annealing has resulted in the formation of silicon nitride layer on the SiO2 surface and in the incorporation of bonded nitrogen into the SiO2 layer. It is also demonstrated that the surface nitride layer is formed primarily by the deposition of silicon nitride resulting from the reaction of fragments of NH3 with the silicon atoms produced by the plasma etching of the quartz tube wall by atomic hydrogen and fluorine.

Published in:

Journal of Applied Physics  (Volume:56 ,  Issue: 2 )

Date of Publication:

Jul 1984

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