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Sequential silicide formation between vanadium and amorphous silicon thin‐film bilayers

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3 Author(s)
Psaras, P.A. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 ; Eizenberg, M. ; Tu, K.N.

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Solid‐state reactions between bilayer thin films of vanadium and amorphous silicon with an excess amount of vanadium have been studied by Rutherford backscattering spectroscopy and Seemann–Bohlin x‐ray diffraction. In prior studies of the interaction between vanadium thin films and single‐crystal silicon, VSi2 has been the only compound observed. In the present study a sequence of compounds was observed. The first silicide, VSi2, was observed to form at 475 °C. At higher temperatures the compounds V5Si3 and V3Si formed in sequence. The growth of VSi2 is linear in time with an activation energy of 2.3±0.4 eV. The growth of V5Si3 is also linear with an activation energy of 2.5±0.1 eV.

Published in:

Journal of Applied Physics  (Volume:56 ,  Issue: 12 )