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Effects of platinum silicide thickness and annealing temperature on arsenic redistribution

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2 Author(s)
Lew, Peter W. ; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305 ; Helms, C.R.

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Arsenic redistribution due to PtSi formation was studied with Auger sputter profiling. Pt was sputter‐deposited onto As‐doped Si wafers (1.7×1020 cm3) with Pt thicknesses of 200, 500, and 1000Å. Samples of each Pt thickness were annealed at 400 °C for 30 min in a forming gas ambient and another set of samples were annealed at 550 °C for 30 min in forming gas. In all cases, As appeared at the PtSi surface and at the PtSi‐Si interface. More As was found at the surface for the higher temperature anneal and more As redistribution occurred overall for the thicker Pt films. The As redistribution is modeled by an initial pileup at the PtSi‐Si interface followed by As outdiffusion to the PtSi surface

Published in:

Journal of Applied Physics  (Volume:56 ,  Issue: 12 )

Date of Publication:

Dec 1984

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