Cart (Loading....) | Create Account
Close category search window

Defect trapping of ion‐implanted deuterium in copper

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Besenbacher, F. ; Institute of Physics, University of Aarhus, DK‐8000 Aarhus C, Denmark ; Bech Nielsen, B. ; Myers, S.M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Trapping of ion‐implanted deuterium (D) by lattice defects in copper has been studied by ion‐beam‐analysis techniques. The evolving depth distribution of D was monitored by using the nuclear reaction D (3He, p) 4He, and the D lattice location was obtained by means of ion channeling. Linear‐ramp annealing following a 15‐keV D+ implantation revealed two annealing stages at 250 and 300 K, respectively, corresponding to trap‐binding enthalpies of 0.22 and 0.42 eV, referenced to an untrapped solution site. From a comparison of these results with theoretical calculations based on the effective‐medium theory, the 0.42‐eV trap has been associated with monovacancies and perhaps small vacancy clusters, an assignment supported by previous positron‐annihilation experiments, whereas the 0.22‐eV trap tentatively is associated with self‐interstitials. The channeling data have been analyzed, utilizing an extended multirow continuum model, and it is found that the data for D trapped to vacancies cannot be interpreted in terms of a single lattice site. This is consistent with the theoretical effective‐medium results, which show that D trapped at a vacancy is delocalized with maximum probability between the vacancy and the octahedral interstitial site, consistent with the experimental findings.

Published in:

Journal of Applied Physics  (Volume:56 ,  Issue: 12 )

Date of Publication:

Dec 1984

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.