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Dynamics of defect creation by ion implantation in thermal SiO2

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2 Author(s)
Devine, R.A.B. ; Centre National d’Etudes des Télécommunications, BP 98, 38243 Meylan, France ; Golanski, A.

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E1 (bridging oxygen vacancy) defect densities have been measured in thermal SiO2 films implanted with ions having various energies and masses. From a plot of the defect production per unit volume versus energy deposited into elastic processes per unit volume we observe a linear slope yielding one E1 defect per 2000 eV deposited in displacement energy. Comparison with the measured average displacement energy per ion of 4 eV suggests that up to 500 defects of other forms might be created for every E1. The predictions of a simple model for E1 creation/annihilation are further tested and the magnitude of the microscopic creation and annihilation cross sections found to be of the order of 10-13 cm2 per ion in both cases. The ratio of the creation and annihilation cross sections is found to decrease monotonically with decreasing implant ion mass.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 7 )

Date of Publication:

Apr 1984

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