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Thin‐film transistors on molecular‐beam‐deposited polycrystalline silicon

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4 Author(s)
Matsui, Makoto ; Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan ; Shiraki, Y. ; Maruyama, Eiichi ; Ohwada, J.-I.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.333419 

Thin‐film transistors (TFT’s) have been fabricated on molecular‐beam‐deposited (MBD) polycrystalline silicon (poly‐Si) on transparent glass substrates using low temperature (below 600 °C) processes. The field‐effect mobility of the TFT is 40 cm2/V s at a gate voltage of 10 V, and the response time is less than 10 ns. Output characteristics of the TFT’s depend on the poly‐Si film thickness. The threshold gate voltage and the field‐effect mobility become lower and higher, respectively, with increasing film thickness. These results can be explained in terms of the thickness‐dependent crystallinity of the surface region in the MBD poly‐Si film. A 10×10 TFT matrix has been fabricated, and by combining the TFT matrix with a twisted‐nematic liquid‐crystal layer, a transmissive‐type active matrix liquid‐crystal display panel has been fabricated. This poly‐Si TFT matrix has proved to be compatible with a liquid‐crystal cell from the viewpoints of both device fabrication and transistor characteristics.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 6 )

Date of Publication:

Mar 1984

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