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The effects of ion beam sputter deposition conditions and post deposition isochronal annealing on the characteristics of molybdenum devices on n‐ and p‐type Si were investigated by I‐V and C‐V measurements. The sputter‐induced damage below the contact was characterized by deep level transient spectroscopy and electron‐beam induced current techniques. It was observed that the barrier height, diffusion length, and the concentration of the process‐induced defects depend on the sputtering voltage and annealing temperature. Further, we found that the observed defects were introduced during the initial stages of deposition. Defects were still present after annealing at 500 °C.