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Quantum efficiency of internal photoeffects in narrow‐gap semiconductors. II. Calculation results in comparison with experimental data

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2 Author(s)
Scharoch, Pawel ; Institute of Physics, Technical University of Wroclaw, 50370 Wroclaw, Poland ; Pawlikowski, Janusz M.

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The spectral characteristics of quantum efficiency of internal photoeffects η* are calculated for narow‐gap InSb and mixed CdxHg1-xTe crystals (with different molar compositions) using the model presented in the first part of the work. Computation results of η* are shown for several different band structure parameters. A comparison of the results is done with the experimental data for photovoltaic detectors made of CdHgTe crystals and reasonable qualitative accordance is found between them. A strong dependence of quantum efficiency on the carrier concentration in the generation volume (via screening effect) is observed in both the model and the experimental results.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 6 )

Date of Publication:

Mar 1984

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