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Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5–1.6 μm region

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2 Author(s)
Temkin, H. ; Bell Laboratories, Murray Hill, New Jersey 07974 ; Tsang, W.T.

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Multiquantum well structures of GaSb/Al0.6Ga0.4Sb were grown by molecular beam epitaxy and their spontaneous and stimulated emission properties were studied. The luminescence spectra exhibited high efficiency with the upward energy shift from λ=1.72  μm of GaSb up to λ=1.31  μm for the well width of ∼40 Å. Optically induced lasing has been obtained at the wavelength as short as λ=1.207  μm at 80 K and in the spectral region of λ=1.5–1.6  μm at temperatures as high as 80 °C. The optical thresholds of the quantum well lasers are similar to that of the more conventional GaSb/AlGaSb heterostructures.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 5 )

Date of Publication:

Mar 1984

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