Cart (Loading....) | Create Account
Close category search window

Cluster center formation in neutron‐damaged silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yousif, H.N. ; Department of Physics, University of Missouri‐Columbia, Columbia, Missouri 65211 ; Cowan, D.L. ; Meese, J.M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The production of vacancy clusters in neutron‐damaged silicon has been investigated by electron spin resonance. It is found that the production of P3 four vacancies and P6 di‐interstitials is independent of oxygen concentration, suggesting that these defects are formed in the primary cascade. Approximately two P3 centers were formed per primary cascade independent of the primary mean recoil energy for irradiations in varying fast neutron spectra. This suggests that these defects are associated with the Brinkman spike which terminates the cascade. Low energy primaries from thermal neutron capture and subsequent gamma recoil are very inefficient in producing these centers.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 5 )

Date of Publication:

Mar 1984

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.