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The crystal growth of the magnetically highly sensitive InSb films, prepared by a simple evaporation on mica substrates with a steep one‐dimensional temperature gradient, is investigated in detail. An optimum evaporation condition is presented. It is shown that the crystalline InSb with thickness less than 0.1 μm consists of single crystal domains oriented mainly along  or  direction, but that the  direction becomes completely dominant for the films thicker than 0.2 μm. The crystal morphology of the film is discussed in relation to the high magnetoresistance value obtained.