By Topic

Reducing the grain size of polycrystalline lead films by the use of AuIn2 barriers to grain growth

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bright, A.A. ; IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 ; Ronay, M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Fine grained Pb or Pb‐alloy films may be produced by the use of barriers to grain growth deposited between Pb layers. We have studied the mechanism of reducing grain growth and the kinetics of barrier formation for AuIn2 barriers with the aid of nuclear backscattering spectroscopy and transmission electron microscopy on films incorporating various deposition sequences. We find that compounds which form in situ are barriers to grain growth during vapor deposition only if one of their constituents is a fast diffusing species such as Au in Pb and if the fast diffusing species is placed underneath each Pb layer. The Au diffuses into the fast moving Pb grain boundaries, imparting a drag on them. Upon depositing In on top of the Pb grains the In forms AuIn2 with the Au in the grain boundaries. The continuous network of AuIn2 then prevents further grain boundary motion.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 4 )