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Electrical and optical properties of Si‐ and Sn‐doped InxGa1-xAs (x≂0.53) grown by molecular beam epitaxy

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3 Author(s)
Kubiak, R.A. ; Philips Research Laboratories, Cross Oak Lane, Redhill, United Kingdom ; Harris, J.J. ; Dawson, P.

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This communication reports the majority‐carrier properties and room‐temperature photoluminescence of InxGa1-xAs (x≂0.53) doped with Si and Sn, grown on InP substrates by molecular beam epitaxy. The peak doping levels attainable with Si and Sn are established, and comparison is made with dopant behavior in GaAs. The effects of Si‐doping level on photoluminescent yield are reported.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 2 )