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On the Hall effect observation of ∼0.07 eV deep acceptor in gallium arsenide

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1 Author(s)
Podor, B. ; Department of Electronic and Electrical Engineering, University of Ife, Ile‐Ife, Oyo State, Nigeria and Research Laboratory for Inorganic Chemistry of the Hungarian Academy of Sciences, Budapest, Hungary

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Hall effect observation of an ∼0.07 eV deep acceptor in GaAs single crystals converted to p type by heat treatment is reported. The acceptor is thought to be identical with the center responsible for the 1.44‐eV photoluminescence band usually seen in GaAs, and attributed recently to an intrinsic defect, namely gallium on arsenic site.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 10 )

Date of Publication:

May 1984

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