By Topic

On the Hall effect observation of ∼0.07 eV deep acceptor in gallium arsenide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Podor, B. ; Department of Electronic and Electrical Engineering, University of Ife, Ile‐Ife, Oyo State, Nigeria and Research Laboratory for Inorganic Chemistry of the Hungarian Academy of Sciences, Budapest, Hungary

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.332959 

Hall effect observation of an ∼0.07 eV deep acceptor in GaAs single crystals converted to p type by heat treatment is reported. The acceptor is thought to be identical with the center responsible for the 1.44‐eV photoluminescence band usually seen in GaAs, and attributed recently to an intrinsic defect, namely gallium on arsenic site.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 10 )