Cart (Loading....) | Create Account
Close category search window
 

Statistical comparisons of data on band‐gap narrowing in heavily doped silicon: Electrical and optical measurements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bennett, H.S. ; Semiconductor Devices and Circuits Division, National Bureau of Standards, Washington, D. C. 20234 ; Wilson, C.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.332950 

A system of subroutines for iteratively reweighted least squares (IRLS) computations has been applied to the published measured and theoretical data on band‐gap narrowing in heavily doped silicon. The data include electrical and optical measurements at room temperature, photoluminescence and optical measurements for temperatures below 35 K, and theoretical calculations at 300 and 0 K. The IRLS procedure allows a clear graphical comparison of the various experimental and theoretical data in band‐gap narrowing to be made. The results are (1) band‐gap changes determined by the optical absorption are consistent at both 300 K and at temperatures below 35 K with recent theoretical calculations, (2) the electrical and optical measurements are not consistent with each other, and (3) the low temperature optical absorption data and the photoluminescence data are not consistent with each other.

Published in:

Journal of Applied Physics  (Volume:55 ,  Issue: 10 )

Date of Publication:

May 1984

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.