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The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current‐carrying contact on a high‐lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime.
Published in:
Journal of Applied Physics
(Volume:54
,
Issue:
9
)
Date of Publication: Sep 1983
- Page(s):
- 5158 - 5160
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.332740
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 July 2009
- Issue Date :
- Sep 1983
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