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A new static method for measuring minority carrier lifetime

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3 Author(s)
Manifacier, J.C. ; Department of Physics and Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Moreau, Y. ; Henisch, H.K.

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The paper describes the theory of a new static lifetime measurement, carried out by means of potential probes in the vicinity of a current‐carrying contact on a high‐lifetime semiconductor, with and without traps. It is based on recognition of the fact that, in the presence of minority carrier injection, a uniform field is obtained only for a particular current density, and that depends directly on the carrier lifetime.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 9 )