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Electrical characterization of (Al,In)As ion implanted with Be and Si following low and high dose multiple energy implant schedules, and annealed between 740 and 815 °C with a pyrolytic silicon dioxide cap is reported. Only very low activation of Be is achieved (≪3%). Silicon activation is considerably higher (≫40%) and increases with increasing anneal temperature. However, a high concentration n‐type surface layer is found on samples annealed at 815 °C. This surface layer is not found on similarly annealed samples which were not implanted, or which were implanted with phosphorus.