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Ion implantation of Si and Be in Al0.48In0.52As

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6 Author(s)
Choudhury, A.N.M.Masum ; Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 20139 ; Rowe, W. ; Tabatabaieā€Alavi, K. ; Fonstad, C.G.
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Electrical characterization of (Al,In)As ion implanted with Be and Si following low and high dose multiple energy implant schedules, and annealed between 740 and 815 °C with a pyrolytic silicon dioxide cap is reported. Only very low activation of Be is achieved (≪3%). Silicon activation is considerably higher (≫40%) and increases with increasing anneal temperature. However, a high concentration n‐type surface layer is found on samples annealed at 815 °C. This surface layer is not found on similarly annealed samples which were not implanted, or which were implanted with phosphorus.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 8 )

Date of Publication:

Aug 1983

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