Cart (Loading....) | Create Account
Close category search window

Ion implantation of Si and Be in Al0.48In0.52As

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Choudhury, A.N.M.Masum ; Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 20139 ; Rowe, W. ; Tabatabaieā€Alavi, K. ; Fonstad, C.G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Electrical characterization of (Al,In)As ion implanted with Be and Si following low and high dose multiple energy implant schedules, and annealed between 740 and 815 °C with a pyrolytic silicon dioxide cap is reported. Only very low activation of Be is achieved (≪3%). Silicon activation is considerably higher (≫40%) and increases with increasing anneal temperature. However, a high concentration n‐type surface layer is found on samples annealed at 815 °C. This surface layer is not found on similarly annealed samples which were not implanted, or which were implanted with phosphorus.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 8 )

Date of Publication:

Aug 1983

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.