Cart (Loading....) | Create Account
Close category search window
 

New photoluminescence lines in GaAs layers grown by metalorganic vapor phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Roth, A.P. ; Semiconductor Research Group, Division of Chemistry, National Research Council, Ottawa, K1A 0R6 Canada ; Goodchild, R.G. ; Charbonneau, S. ; Williams, D.F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.332458 

A set of luminescence lines previously observed only in GaAs layers grown by molecular beam epitaxy (MBE) has been observed for the first time in layers grown by metalorganic vapor phase epitaxy (MOVPE). The lines which appear between 1.5515 and 1.504 eV are more evident in samples grown with low arsine concentrations and low substrate temperatures. It appears that these additional lines are due to recombinations involving native defects. Unlike the MBE case, extrinsic impurities from the reactants are incorporated in the layers during the growth, thus reducing the concentration of native defects responsible for the additional lines.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 6 )

Date of Publication:

Jun 1983

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.