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Electrical properties of S implants in GaAs activated by infrared rapid thermal annealing

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3 Author(s)
Kuzuhara, M. ; Microelectronics Research Laboratories, Nippon Electric Company, Ltd., 1‐1, Miyazaki, Yonchome, Miyamae‐ku, Kawasaki, Kanagawa 213, Japan ; Kohzu, H. ; Takayama, Y.

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S‐implanted GaAs at room temperature was annealed by several seconds radiation from halogen lamps. Differential Hall effect/sheet resistivity measurements have been used to study the annealing behavior and electrical carrier concentration profiles of S‐implanted GaAs. Electrical activation was found to increase with increasing annealing temperature up to 1100 °C. A maximum electrical activation of 78% was obtained for a dose of 5×1013 cm-2. Also, more than 5×1018 cm-3 peak carrier concentration was obtained for a dose of 1×1014 cm-2, indicating about three times higher peak concentration than that obtained after conventional furnace annealing. For higher doses, the implanted S in the annealed GaAs does not follow Gaussian distribution even after rapid annealing. Damage‐enhanced outdiffusion of S is considered to be responsible for this result.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 6 )

Date of Publication:

Jun 1983

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