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An analysis having improved rigor has been made of the capacitance transient due to thermal emission from charged defect centers in a semiconductor depletion region. This analysis extends the range of applicability of capacitance–transient defect characterization techniques to nonexponential transient conditions which occur in diodes with trap densities of the same order as the net shallow dopant density or in diodes with somewhat smaller trap densities when defect centers are charged initially in only a part of the depletion region. An example of the improvement is shown for three silicon diodes heavily doped with platinum.