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Phosphorus distribution in TaSi2 films by diffusion from a polycrystalline silicon layer

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2 Author(s)
Pelleg, J. ; Bell Laboratories, Murray Hill, New Jersey 07974 ; Murarka, S.P.

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Secondary ion mass spectroscopy was used to measure phosphorus concentration profiles in TaSi2 thin films deposited on P doped polycrystalline Si/SiO2/Si wafers by cosputtering. Fast redistribution of P in TaSi2 takes place by its up‐diffusion from the polycrystalline Si layer. Radioactive assay of 32P obtained by neutron activation confirmed the fast‐diffusion character of P in TaSi2. From preliminary results the temperature dependence of the diffusion coefficients over the temperature range of 664 °C‐913 °C can be expressed by the following relations: Dc=6.44×10-10 exp[-0.61/(kT)] and Da=2.0×10-8 exp[-0.76/(kT)], where Dc and Da represent diffusion in the silicide film near and away from the surface, respectively.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 3 )