Cart (Loading....) | Create Account
Close category search window

Dark defects in InGaAsP/InP double heterostructure lasers under accelerated aging

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Fukuda, M. ; Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino‐shi, Tokyo 180, Japan ; Wakita, K. ; Iwane, G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Degradation modes due to dark defects under accelerated aging for InGaAsP/InP double heterostructure lasers are investigated by monitoring pulse threshold current, leak current, absorption coefficient, gain factor, and electroluminescence topograph. Most of the dark defects are dark spot defects (DSD’s) and there are only few 〈100〉 dark line defects. At the initial stage of the degradation, these dark defects scarcely absorb the emitted light, and the reduction of gain factor causes the increase of pulse threshold current. After this stage, dark defects begin to act as absorber of the emitted light. The generation time of such DSD’s strongly depends on the injected current density but only weakly on the junction temperature in the range of 25 ° to 250 °C. The activation energies for the generation time of the first dark spot defect and the growing speed of 〈100〉 dark line defects are estimated to be 0.16 and 0.2 eV, respectively.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 3 )

Date of Publication:

Mar 1983

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.