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Interdiffusion in copper–aluminum thin film bilayers. I. Structure and kinetics of sequential compound formation

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3 Author(s)
Hentzell, H.T.G. ; IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 ; Thompson, R.D. ; Tu, K.N.

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Interdiffusion in Cu–Al thin film bilayers at temperatures between 160 and 300 °C has been studied by a combination of glancing‐incidence x‐ray diffraction, Rutherford backscattering spectroscopy, and transmission electron diffraction and microscopy. A sequential intermetallic compound formation was observed in samples with an excess amount of Cu with θ‐CuAl2 forming first, followed by η2‐CuAl, and γ2‐Cu9Al4. In samples with excess Al, the θ‐CuAl2 is the first and the last phase formed. The thickening of these compounds was found to obey a parabolic relationship with time, and especially the thickening of θ‐CuAl2 can be described by a prefactor of 7.4 cm2/s and an activation energy of 1.31 eV.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 12 )

Date of Publication:

Dec 1983

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