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Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon

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3 Author(s)
Pennycook, S.J. ; Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 ; Narayan, J. ; Holland, O.W.

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Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by {112} Si surfaces with the {111} Si and {1¯012} Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 12 )