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Strain‐induced effects in GaAs directional coupler switches

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1 Author(s)
Benson, T.M. ; University College, Cardiff, Great Britain

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Metal‐gap directional coupler structures have been fabricated on n/n+ GaAs layers. Coupling lengths measured by a sequential cleaving technique are found to be dependent upon metal thickness. Strain‐induced refractive index changes are shown to be the dominant cause of waveguiding.

Published in:

Journal of Applied Physics  (Volume:54 ,  Issue: 11 )