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Monolithic 40-GHz 670-mW HBT grid amplifier

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6 Author(s)
Cheh-Ming Liu ; Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA ; Sovero, E.A. ; Wu Jing Ho ; Higgins, J.A.
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A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons of patterns and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stable grid. The maximum saturated output power is 670 mW at 40 GHz with a peak power-added efficiency of 4%. This is the first report of power measurements on the monolithic quasi-optical amplifier.

Published in:

Microwave Symposium Digest, 1996., IEEE MTT-S International  (Volume:2 )

Date of Conference:

17-21 June 1996