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Lateral seeding epitaxy by cw Ar laser irradiation and by high temperature chemical vapor deposition technique

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5 Author(s)
Nagao, S. ; Computer Development Laboratories Ltd 4‐1, Mizuhara, Itami, 664, Japan ; Kayano, S. ; Tsubouchi, N. ; Nishimura, T.
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A single crystal Si film of [111] orientation has been obtained over patterned amorphous insulating layer stripes for lateral seeding recrystallization. High‐temperature, vapor‐phase‐epitaxial (VPE) growth technique has been utilized to form single and polycrystalline Si films on (111) Si substrate with the insulator stripes. The single crystal film on the exposed Si substrate and polycrystalline film on insulator were recrystallized with a scanning cw Ar laser. Topographical features and crystalline perfection associated with the laser‐induced recrystallization were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and TED (transmission electron diffraction). At high power laser irradiation, the resulting recrystallization of polycrystalline Si seeded by single crystal Si deposited on substrate has been observed.

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Journal of Applied Physics  (Volume:53 ,  Issue: 9 )