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The present paper describes the effects of damages and impurity on the formation of platinum silicide prepared on polycrystalline substrate. Damages and impurities have been introduced into polycrystalline silicon by ion implantation prior to preparing metal layer. The major analytical techniques employed are Auger electron spectroscopy, secondary ion mass spectrometry, and scanning electron microscopy. The observation indicates a formation of irregular and nonplanar structure at the platinum silicide‐silicon interface caused by the damages. Also, voids at the silicide‐silicon interface are observed in the sample containing implanted argon. Direct evidence that the voids are filled with argon is obtained by mass spectrometry. Mechanism of the anomalous interface formation is discussed.