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The equation derived by G. F. Dionne [J. Appl. Phys. 44, 5361 (1973)], has been used as a basis for the present analysis. Escape probability has been determined for various insulators and semiconductors. The relative importance of the emission and production terms has been discussed in various energy gap‐width regions. The role of electron affinity is also discussed. Values for the escape probabilities and the mean free paths of secondaries are given.