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The kinetics of growth and dissolution and compositional grading in the solid are computed when a liquid‐phase epitaxial system is subjected to temperature programming. We solve the transport equations (including the effect of interface motion) by means of series expansions in powers of t1/2. This requires a careful analysis of the phase relations that hold at the crystal‐fluid interface, because these are now explicitly time dependent. The theory is applied to a specific active layer of a (GaAl)As heterostructure laser, but the calculations can be extended to any III‐V ternary system, and indeed to any multicomponent system.