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The kinetics of growth and dissolution and compositional grading in the solid are computed when a liquid‐phase epitaxial system is subjected to temperature programming. We solve the transport equations (including the effect of interface motion) by means of series expansions in powers of t1/2. This requires a careful analysis of the phase relations that hold at the crystal‐fluid interface, because these are now explicitly time dependent. The theory is applied to a specific active layer of a (GaAl)As heterostructure laser, but the calculations can be extended to any III‐V ternary system, and indeed to any multicomponent system.
Published in:
Journal of Applied Physics
(Volume:53
,
Issue:
7
)
Date of Publication: Jul 1982
- Page(s):
- 4907 - 4918
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.331324
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 July 2009
- Issue Date :
- Jul 1982
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