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Schottky barrier of nonuniform contacts to n‐type and p‐type silicon

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2 Author(s)
Thompson, R.D. ; IBM, T. J. Watson Research Center, Yorktown Heights, New York 10598 ; Tu, K.N.

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A current‐voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.

Published in:
Journal of Applied Physics  (Volume:53 ,  Issue: 6 )

Date of Publication: Jun 1982

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