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Effect of top electrode deposition rate on tunnel junction characteristics

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3 Author(s)
Ocampo, M.A. ; Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70‐360, México 20, D. F. ; Heiras, J.L. ; Will, T.A.

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We have found that the rate of deposition of Pb when fabricating thin film Al‐oxide‐Pb tunnel junctions has a small but reproducible effect on tunneling characteristics. Zero bias junction conductance is typically increased by a factor of 2 or more when the top electrode deposition rate is raised from 10 to 100 Å/s. This change is associated principally with a reduction of the effective barrier height at the Pb interface.

Published in:

Journal of Applied Physics  (Volume:53 ,  Issue: 5 )

Date of Publication:

May 1982

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